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类型: Drop-in Circulator 频率: 0.8 to 2.2 GHz 带宽: 70 to 200 MHz 平均大前锋: 100 W 插入损耗: 0.3 to 0.5 dB -
类型: High Q Capacitors 类型: Ceramic Capacitors 电容: 2.1 to 2500 pF 绝缘材料: Ceramic 耗散系数: 0.15%, 0.25%, 1.50%, 2.50%, 4.00% -
频率: DC to 26.5 GHz 衰减: 30 dB 电源: 2 W 驻波比: 1.50:1 包装类型: Module with Connectors -
应用: 4G/LTE, 5G NR, WCDMA 衰减: 40 dB 配置: Band Stop Filter 类型: Digitally Controlled 频率: 0.67 to 1 GHz -
类型: High Q Capacitors 类型: Ceramic Capacitors 电容: 1 to 1500 pF 绝缘材料: Ceramic 耗散系数: 0.15%, 0.25%, 1.50%, 2.50%, 4.00% -
频率: 50 MHz to 3 GHz 衰减: 6 dB 电源: 2 W 驻波比: 1.35:1 包装类型: Module with Connectors -
类型: Drop-in Circulator 频率: 7 to 18 GHz 带宽: 300 to 1200 MHz 平均大前锋: 10 W 插入损耗: 0.3 to 0.4 dB -
应用: 4G/LTE, 5G NR, WCDMA 衰减: 40 dB 配置: Band Stop Filter 类型: Digitally Controlled 频率: 0.67 to 1 GHz -
类型: High Q Capacitors 类型: Ceramic Capacitors 电容: 0.6 to 1000 pF 绝缘材料: Ceramic 耗散系数: 0.15%, 0.25%, 1.50%, 2.50%, 4.00% -
频率: 50 MHz to 3 GHz 衰减: 3 dB 电源: 2 W 驻波比: 1.35:1 包装类型: Module with Connectors -
类型: High Q Capacitors 类型: Ceramic Capacitors 电容: 0.7 to 680 pF 绝缘材料: Ceramic 耗散系数: 0.15%, 0.25%, 1.50%, 2.50%, 4.00% -
应用: 4G/LTE, 5G NR, WCDMA 衰减: 40 dB 配置: Band Stop Filter 类型: Digitally Controlled 频率: 0.67 to 1 GHz -
频率: 50 MHz to 3 GHz 衰减: 20 dB 电源: 2 W 驻波比: 1.35:1 包装类型: Module with Connectors -
类型: High Q Capacitors 类型: Ceramic Capacitors 电容: 0.4 to 560 pF 绝缘材料: Ceramic 耗散系数: 0.15%, 0.25%, 1.50%, 2.50%, 4.00% -
频率: 50 MHz to 3 GHz 衰减: 10 dB 电源: 2 W 驻波比: 1.35:1 包装类型: Module with Connectors -
类型: High Q Capacitors 类型: Ceramic Capacitors 电容: 0.3 to 330 pF 绝缘材料: Ceramic 耗散系数: 0.15%, 0.25%, 1.50%, 2.50%, 4.00% -
类型: Drop-in Circulator 配置: Dual Junction 频率: 0.5 to 1 GHz 带宽: 75 MHz 平均大前锋: 100 W -
应用: 4G/LTE, 5G NR, WCDMA 衰减: 40 dB 配置: Band Stop Filter 类型: Digitally Controlled 频率: 0.67 to 1 GHz -
频率: DC to 40 GHz 衰减: 30 dB 电源: 2 W 驻波比: 1.40:1 包装类型: Module with Connectors -
类型: High Q Capacitors 类型: Ceramic Capacitors 电容: 0.2 to 180 pF 绝缘材料: Ceramic 耗散系数: 0.15%, 0.25%, 1.50%, 2.50%, 4.00%
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