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- the design of cmos rf integrated circuits thomas h lee
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- T H Lee The Design of Radio-Frequency CMOS Circuits
- The Design of CMOS RF Integrated Circuits Thomas H Lee
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应用: 4G/LTE, WiMax, 5G NR, WCDMA 衰减: 40 dB 配置: Band Stop Filter 类型: Mechanically Controlled 频率: 1.7 to 2.12 GHz -
类型: Diode Detector 极性: Negative 频率: 2 to 12 GHz 最大输入功率: 20 dBm TSS: -45 dBm -
频率: 6 GHz 衰减: Passivated Stainless Steel 电源: 2 W 峰值功率: 250 W 驻波比: 1.3:1 -
应用: 4G/LTE, WiMax, 5G NR, WCDMA 衰减: 40 dB 配置: Band Stop Filter 类型: Mechanically Controlled 频率: 1.7 to 2.12 GHz -
类型: Diode Detector 极性: Positive 频率: 2 to 8 GHz 最大输入功率: 20 dBm TSS: -45 dBm -
类型: Cavity Filter 频率: 36 to 42 MHz 插入损耗: 1.5 dB 电源: 5 W 阻抗: 50 Ohms -
频率: 6 GHz 衰减: Passivated Stainless Steel 电源: 2 W 峰值功率: 250 W 驻波比: 1.3:1
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类型: Diode Detector 极性: Negative 频率: 2 to 8 GHz 最大输入功率: 20 dBm TSS: -45 dBm -
应用: 4G/LTE, WiMax, 5G NR, WCDMA 衰减: 40 dB 配置: Band Stop Filter 类型: Mechanically Controlled 频率: 1.7 to 2.12 GHz -
类型: Diode Detector 极性: Positive 频率: 2 to 6 GHz 最大输入功率: 20 dBm TSS: -45 dBm -
频率: 6 GHz 衰减: Passivated Stainless Steel 电源: 2 W 峰值功率: 250 W 驻波比: 1.3:1
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应用: 4G/LTE, WiMax, 5G NR, WCDMA 衰减: 40 dB 配置: Band Stop Filter 类型: Mechanically Controlled 频率: 1.7 to 2.12 GHz -
频率: 6 GHz 衰减: Passivated Stainless Steel 电源: 2 W 峰值功率: 250 W 驻波比: 1.3:1
