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频率: DC to 50 GHz 衰减: 0.15 dB 电源: 0.31 W, 24.91 dBm 包装类型: Die 尺寸: 23 x 18 mils -
频率: DC to 50 GHz 衰减: 0.15 dB 电源: 0.31 W, 24.91 dBm 包装类型: Die 尺寸: 17 x 18 mils
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Dk（介电常数）: 3 Df（耗散因数）: 0.002 Tg: 200 Degrees C CTE Z: 50 to 300 ppm/? 厚度: 0.5 mm -
Dk（介电常数）: 3 Df（耗散因数）: 0.002 Tg: 200 Degrees C CTE Z: 50 to 300 ppm/Degree C 厚度: 0.5 mm -
Dk（介电常数）: 3.4 Df（耗散因数）: 0.003 Tg: 250 Degrees C CTE Z: 50 to 300 ppm/Degree C 厚度 英寸: 0.177 in. -
Dk（介电常数）: 2.6 Tg: 220 Degree C CTE X-Y: 56 ppm/Degree C CTE Z: 56 ppm/Degree C 厚度: 0.057 to 0.086 mm
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Dk（介电常数）: 2.7 Tg: 220 Degree C CTE X-Y: 56 ppm/Degree C CTE Z: 56 ppm/Degree C 厚度: 0.057 to 0.086 mm
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Dk（介电常数）: 2.6 Tg: 220 Degree C CTE X-Y: 56 ppm/Degree C CTE Z: 56 ppm/Degree C 厚度: 0.038 to 0.086 mm
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Dk（介电常数）: 2.8 Tg: 155 Degree C CTE X-Y: 55 ppm/Degree C CTE Z: 55 ppm/Degree C 厚度: 0.03 to 0.06 mm
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Dk（介电常数）: 3.05 Df（耗散因数）: 0.0018 Td: 400 Degrees C Tg: 210 Degrees C CTE X-Y: 12 ppm/°C -
Dk（介电常数）: 3.45 Df（耗散因数）: 0.0032 Td: 390 Degrees C Tg: 200 Degrees C CTE X-Y: 16 ppm/°C -
Dk（介电常数）: 3.02 Df（耗散因数）: 0.0021 Td: 380 Degrees C Tg: 200 Degrees C CTE X-Y: 15 to 16 ppm/Degree C -
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Dk（介电常数）: 3.48 Df（耗散因数）: 0.0029 Td: 360 Degrees C Tg: 200 Degrees C CTE X-Y: 12 ppm/ Degree C -
Dk（介电常数）: 3 / 3.38 / 3.45 / 3.48 Df（耗散因数）: 0.0020 to 0.0029 Td: 360 Degrees C Tg: 200 Degrees C CTE X-Y: 12 ppm/°C -
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