SmartMatrix 1500XP

参数

• 间距 / Pitch : 50 um
• 应用 / Application : DDR3, DDR4, LPDDR3, LPDDR4, GDDR5, GDDR6, HBM, HBM2 with 2Hi, 4Hi, and 8Hi stack, KGD (known good die) and KGS (known good stack) test up to 3.2 Gbps Next-generation and emerging DRAM memory devices
• 特点 / Features : Higher parallelism, higher test efficiency, and lower cost of test by using Advanced TRE technology (ATRE), Excellent contact stability and electrical performance to optimize yield, Superior thermal operation to shorten soak time and improve scrub perform
• 频率 / Frequency : 125 MHz to 200 MHz
• 接触电阻 / Contact Resistance : = 0.5 O(Power path resistance), = 0.1 O(Ground path resistance), = 10.0 O(Signal path resistance), = 2.0 O(Low resistance path signal path resistance)
• 直流电流 / DC Current : 1200 to 1600 mA(Continous Current), 2500 mA(Pulsed Current)
• 工作温度 / Operating Temperature : -40 to 165 Degree C
• 垫子尺寸 / Pad Size : 50 um
• 射频功率 / RF Power : 500 mW(Power Dissipation)

厂家介绍