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间距: 50 um 应用: DDR3, DDR4, LPDDR3, LPDDR4, GDDR5, GDDR6, HBM, HBM2 with 2Hi, 4Hi, and 8Hi stack, KGD (known good die) and KGS (known good stack) test up to 3.2 Gbps Next-generation and emerging DRAM memory devices 特点: Higher parallelism, higher test efficiency, and lower cost of test by using Advanced TRE technology (ATRE), Excellent contact stability and electrical performance to optimize yield, Superior thermal operation to shorten soak time and improve scrub perform 频率: 125 MHz to 200 MHz 接触电阻: = 0.5 O(Power path resistance), = 0.1 O(Ground path resistance), = 10.0 O(Signal path resistance), = 2.0 O(Low resistance path signal path resistance) -
间距: 0.4 mm to 1.0 mm 特点: Excellent signal integrity, all the way to the package DUT pin., Multi-DUT capability enables faster debug of complex test programs. Compatible with all Pyramid Probes and all device types. Grypper™ socket option eliminates the need for a special test soc 接触电阻: 50 mO(Probe) 直流电流: 0.5 to 10 A 回波损耗: >10 dB