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间距: 90 µm 特点: 2D Vertical MEMS probe technology, scalable to 90 µm and below, Ultra-stable Cres on Cu bumps, Proprietary CoolProbe™ technology to support extreme current requirements, Low probe force to reduce bump damage, Cu pillar bump probing, minimum grid-array pit -
间距: 50 um 特点: Support for single-row pad layout down to 50 um pitch, Excellent positional accuracy over more than 1 million touchdowns, Minimization of false test failures Wire bond pad probing, minimum in-line pitch of 50 µm, Supports high multi-site testing, scalable 晶片尺寸: 300 mm -
间距: 50 um 应用: DDR3, DDR4, LPDDR3, LPDDR4, GDDR5, GDDR6, HBM, HBM2 with 2Hi, 4Hi, and 8Hi stack, KGD (known good die) and KGS (known good stack) test up to 3.2 Gbps Next-generation and emerging DRAM memory devices 特点: Higher parallelism, higher test efficiency, and lower cost of test by using Advanced TRE technology (ATRE), Excellent contact stability and electrical performance to optimize yield, Superior thermal operation to shorten soak time and improve scrub perform 频率: 125 MHz to 200 MHz 接触电阻: = 0.5 O(Power path resistance), = 0.1 O(Ground path resistance), = 10.0 O(Signal path resistance), = 2.0 O(Low resistance path signal path resistance) -
间距: 250 to 500 um 应用: WLCSP 特点: Broad range of spring pins options for targeted application, with pitch ranging 250 – 500 um, Variety of tip materials for maximum lifetime, Replaceable individual probes for easy maintenance -
间距: 50 um 特点: 3D MEMS MicroSpring contact design with high pin count and small pad size capability, Wide temperature compatibility for more controlled probing and faster setup, higher probe card availability and better test throughput, Scalability to 50 um pad pitch, I 探头尺寸: 50 mm to 100 mm -
间距: 40 um 特点: Supports 40 um pitch, 20/40 um staggered design, Short-beam option for high speed testing, up to 3 GHz @-3 dB, Uniform scrub performance for improved wire bond reliability -
间距: 50 to 1000µm (25um step) (Recommended maximum GS (SG) pitch: 250um) 频率: DC to 67 GHz 配置: GS 配置: GSG 配置: GSSG -
间距: 50 to 1000µm (25um step) (Recommended maximum GS (SG) pitch: 250um) 频率: DC to 40 GHz 配置: GS 配置: GSG 配置: GSSG -
电感: 0.4 to 0.56 uH 直流电阻: 1.1 Ohms 直流电流: 0.1 A 自谐振频率: 250 MHz 安装: Leaded -
电感: 3.2 to 4.7 uH 直流电阻: 3.3 Ohms 直流电流: 0.06 A 自谐振频率: 50 MHz 安装: Leaded -
电感: 0.02 to 0.025 uH 直流电阻: 0.04 Ohms 直流电流: 0.25 A 自谐振频率: 1000 MHz 安装: Leaded -
电感: 500 to 1000 uH 直流电阻: 113 Ohms 直流电流: 0.011 A 自谐振频率: 1.1 MHz 安装: Leaded -
电感: 50 to 100 uH 直流电阻: 18 Ohms 直流电流: 0.027 A 自谐振频率: 5.4 MHz 安装: Leaded -
电感: 0.075 to 0.1 uH 直流电阻: 0.5 Ohms 直流电流: 0.25 A 自谐振频率: 500 MHz 安装: Leaded
