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分类：探针卡间距: 80 um 特点: MEMS wire needle for Cu Pillar bump probing, Applicable for full array and multi-DUT layout, Extreme low force below 2.2 gf, Ideal for pitch above 80 um, wire type needle for easy maintenance, Applicable for auto assembly -
分类：探针卡间距: 40 um 特点: Ideal for device pitch down to 40 um, Suitable for tiny pad size down to 35 um, forming wire needle for simplistics maintenance process, Needle Coating by MEMS process, Compatible with MPI in-house substrates -
分类：探针卡间距: 80 um 特点: MEMS -Like Characteristics, Available in both flat and pointed tip, Leave smaller probe mark on the DUT, Ideal for pitch above 80 um, Force 50% Lower than Conventional Buckling Team, C.C.C 40% Higher than Conventional Buckling Team, Longer Lifetime benefi -
分类：探针卡特点: Pogo pin Manufactured with MEMS Process, Customized force to fit Special testing condition, Easy Maintenance and single pin replacement, Comfortable with MPI in-house substrates -
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间距: 90 µm 特点: 2D Vertical MEMS probe technology, scalable to 90 µm and below, Ultra-stable Cres on Cu bumps, Proprietary CoolProbe™ technology to support extreme current requirements, Low probe force to reduce bump damage, Cu pillar bump probing, minimum grid-array pit -
间距: 50 um 特点: Support for single-row pad layout down to 50 um pitch, Excellent positional accuracy over more than 1 million touchdowns, Minimization of false test failures Wire bond pad probing, minimum in-line pitch of 50 µm, Supports high multi-site testing, scalable 晶片尺寸: 300 mm -
间距: 50 um 应用: DDR3, DDR4, LPDDR3, LPDDR4, GDDR5, GDDR6, HBM, HBM2 with 2Hi, 4Hi, and 8Hi stack, KGD (known good die) and KGS (known good stack) test up to 3.2 Gbps Next-generation and emerging DRAM memory devices 特点: Higher parallelism, higher test efficiency, and lower cost of test by using Advanced TRE technology (ATRE), Excellent contact stability and electrical performance to optimize yield, Superior thermal operation to shorten soak time and improve scrub perform 频率: 125 MHz to 200 MHz 接触电阻: = 0.5 O(Power path resistance), = 0.1 O(Ground path resistance), = 10.0 O(Signal path resistance), = 2.0 O(Low resistance path signal path resistance) -
间距: 250 to 500 um 应用: WLCSP 特点: Broad range of spring pins options for targeted application, with pitch ranging 250 – 500 um, Variety of tip materials for maximum lifetime, Replaceable individual probes for easy maintenance -
间距: 74 µm 特点: Measurement accuracy : Excellent signal integrity, Minimum contact resistance, Repeatable results, High test efficiency : Straightforward cleaning and maintenance Minimum pad damage, Minimum contact force, Easily replaceable probes, Lower cost of test, Lo 频率: up to 10 GHz 工作温度: -40 to 140 Degree C 垫子材料: Al -
间距: 36 to 72 um 特点: Ship high-yield KGD: Consistent low contact resistance and low-inductance probe tips ensure accurate and repeatable mmW RF measurements. Stable DUT operation: Power and ground planes at the DUT provide low-inductance power transmission paths. Patented byp 频率: up to 81 GHz 接触电阻: 0.005 to 0.010 O (Au pads), 0.1 to 0.2 O (Al pads) 直流电流: 0.2 to 1 A -
间距: 0.4 mm to 1.0 mm 特点: Excellent signal integrity, all the way to the package DUT pin., Multi-DUT capability enables faster debug of complex test programs. Compatible with all Pyramid Probes and all device types. Grypper™ socket option eliminates the need for a special test soc 接触电阻: 50 mO(Probe) 直流电流: 0.5 to 10 A 回波损耗: >10 dB -
间距: 50 um 特点: 3D MEMS MicroSpring contact design with high pin count and small pad size capability, Wide temperature compatibility for more controlled probing and faster setup, higher probe card availability and better test throughput, Scalability to 50 um pad pitch, I 探头尺寸: 50 mm to 100 mm -
间距: 80 to 106 um 特点: Measurement accuracy, Excellent signal integrity, Minimum contact resistance, Repeatable results, High test efficiency, Straightforward cleaning and maintenance Minimum pad damage, Minimum contact force, Easily replaceable probes, Lower cost of test, Long 频率: up to 45 GHz 直流电流: 0.8 to 10 A 隔离: 30 dB -
间距: 40 um 特点: Supports 40 um pitch, 20/40 um staggered design, Short-beam option for high speed testing, up to 3 GHz @-3 dB, Uniform scrub performance for improved wire bond reliability -
间距: 80 um 特点: Broad range of vertical and vertical MEMS probe options, scalable to 80 um pitch, Proprietary manufacturing technology for reduced Cres and improved wafer yield, Superior current-carrying capability for enhanced production uptime and quick time-to-market -
间距: 45 um 应用: Cloud computing and Self-Driving Automobiles 特点: Minimum grid-array pitch of 45 µm, Ultra-low probe force for direct probing on copper through silicon vias or solder microbumps, ~1 gram per probe at operating overtravel with best-in-class contact resistance stability, Support for HBM known-good-die or k