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间距: 0.4 mm to 1.0 mm 特点: Excellent signal integrity, all the way to the package DUT pin., Multi-DUT capability enables faster debug of complex test programs. Compatible with all Pyramid Probes and all device types. Grypper™ socket option eliminates the need for a special test soc 接触电阻: 50 mO(Probe) 直流电流: 0.5 to 10 A 回波损耗: >10 dB -
间距: 50 um 特点: 3D MEMS MicroSpring contact design with high pin count and small pad size capability, Wide temperature compatibility for more controlled probing and faster setup, higher probe card availability and better test throughput, Scalability to 50 um pad pitch, I 探头尺寸: 50 mm to 100 mm -
间距: 80 to 106 um 特点: Measurement accuracy, Excellent signal integrity, Minimum contact resistance, Repeatable results, High test efficiency, Straightforward cleaning and maintenance Minimum pad damage, Minimum contact force, Easily replaceable probes, Lower cost of test, Long 频率: up to 45 GHz 直流电流: 0.8 to 10 A 隔离: 30 dB -
应用: Micro controllers, logic IC’s, automotive IC’s, touchscreen controllers & sensor IC’s 特点: Designed for pad testing of either fine-pitch wire-bond devices or pre-flip chip applications of logic devices 工作温度: -40 to 140 Degree C -
间距: 40 um 特点: Supports 40 um pitch, 20/40 um staggered design, Short-beam option for high speed testing, up to 3 GHz @-3 dB, Uniform scrub performance for improved wire bond reliability -
间距: 80 um 特点: Broad range of vertical and vertical MEMS probe options, scalable to 80 um pitch, Proprietary manufacturing technology for reduced Cres and improved wafer yield, Superior current-carrying capability for enhanced production uptime and quick time-to-market -
间距: 45 um 应用: Cloud computing and Self-Driving Automobiles 特点: Minimum grid-array pitch of 45 µm, Ultra-low probe force for direct probing on copper through silicon vias or solder microbumps, ~1 gram per probe at operating overtravel with best-in-class contact resistance stability, Support for HBM known-good-die or k -
间距: 50 to 1000µm (25um step) (Recommended maximum GS (SG) pitch: 250um) 频率: DC to 67 GHz 配置: GS 配置: GSG 配置: GSSG -
间距: 50 to 1000µm (25um step) (Recommended maximum GS (SG) pitch: 250um) 频率: DC to 40 GHz 配置: GS 配置: GSG 配置: GSSG -
电感: 43 to 86 uH 直流电阻: 15 Ohms 直流电流: 0.028 A 自谐振频率: 5.6 MHz 安装: Leaded -
电感: 5.5 to 8.2 uH 直流电阻: 4.5 Ohms 直流电流: 0.05 A 自谐振频率: 32 MHz 安装: Leaded -
电感: 0.59 to 0.82 uH 直流电阻: 1.4 Ohms 直流电流: 0.1 A 自谐振频率: 180 MHz 安装: Leaded -
电感: 0.055 to 0.076 uH 直流电阻: 0.15 Ohms 直流电流: 0.25 A 自谐振频率: 615 MHz 安装: Leaded -
电感: 38 to 75 uH 直流电阻: 13.5 Ohms 直流电流: 0.03 A 自谐振频率: 5.9 MHz 安装: Leaded -
电感: 340 to 680 uH 直流电阻: 53 Ohms 直流电流: 0.015 A 自谐振频率: 2 MHz 安装: Leaded -
电感: 34 to 68 uH 直流电阻: 12 Ohms 直流电流: 0.03 A 自谐振频率: 6.2 MHz 安装: Leaded -
电感: 4.5 to 6.8 uH 直流电阻: 4.5 Ohms 直流电流: 0.055 A 自谐振频率: 34 MHz 安装: Leaded -
电感: 0.5 to 0.68 uH 直流电阻: 1.3 Ohms 直流电流: 0.1 A 自谐振频率: 240 MHz 安装: Leaded -
电感: 3.9 to 5.8 uH 直流电阻: 4.2 Ohms 直流电流: 0.058 A 自谐振频率: 36 MHz 安装: Leaded -
电感: 28 to 56 uH 直流电阻: 10.5 Ohms 直流电流: 0.035 A 自谐振频率: 6.3 MHz 安装: Leaded