射频网为您提供所有产品信息包括：122条分类、214553个产品。
-
特点: Suitable formuli-die test, including peripheral pad layout, Best suited to measuring higher density, higher speed logic and SoC devices -
特点: Best suited to flip chip wafer testing of microprocessors and SoC devices -
应用: WLCSP 特点: Best suited to one-touchdown testing of 12-inch wafers (NAND Flash) as well as WLCSP applications -
-
分类：探针卡间距: 80 um 特点: MEMS wire needle for Cu Pillar bump probing, Applicable for full array and multi-DUT layout, Extreme low force below 2.2 gf, Ideal for pitch above 80 um, wire type needle for easy maintenance, Applicable for auto assembly -
分类：探针卡间距: 40 um 特点: Ideal for device pitch down to 40 um, Suitable for tiny pad size down to 35 um, forming wire needle for simplistics maintenance process, Needle Coating by MEMS process, Compatible with MPI in-house substrates -
分类：探针卡间距: 80 um 特点: MEMS -Like Characteristics, Available in both flat and pointed tip, Leave smaller probe mark on the DUT, Ideal for pitch above 80 um, Force 50% Lower than Conventional Buckling Team, C.C.C 40% Higher than Conventional Buckling Team, Longer Lifetime benefi -
分类：探针卡特点: Pogo pin Manufactured with MEMS Process, Customized force to fit Special testing condition, Easy Maintenance and single pin replacement, Comfortable with MPI in-house substrates -
-
-
-
间距: 90 µm 特点: 2D Vertical MEMS probe technology, scalable to 90 µm and below, Ultra-stable Cres on Cu bumps, Proprietary CoolProbe™ technology to support extreme current requirements, Low probe force to reduce bump damage, Cu pillar bump probing, minimum grid-array pit -
特点: One-touchdown probing, Field-adjustable planarity, Efficient, high-integrity electrical test -
间距: 50 um 特点: Support for single-row pad layout down to 50 um pitch, Excellent positional accuracy over more than 1 million touchdowns, Minimization of false test failures Wire bond pad probing, minimum in-line pitch of 50 µm, Supports high multi-site testing, scalable 晶片尺寸: 300 mm -
间距: 50 um 应用: DDR3, DDR4, LPDDR3, LPDDR4, GDDR5, GDDR6, HBM, HBM2 with 2Hi, 4Hi, and 8Hi stack, KGD (known good die) and KGS (known good stack) test up to 3.2 Gbps Next-generation and emerging DRAM memory devices 特点: Higher parallelism, higher test efficiency, and lower cost of test by using Advanced TRE technology (ATRE), Excellent contact stability and electrical performance to optimize yield, Superior thermal operation to shorten soak time and improve scrub perform 频率: 125 MHz to 200 MHz 接触电阻: = 0.5 O(Power path resistance), = 0.1 O(Ground path resistance), = 10.0 O(Signal path resistance), = 2.0 O(Low resistance path signal path resistance) -
间距: 250 to 500 um 应用: WLCSP 特点: Broad range of spring pins options for targeted application, with pitch ranging 250 – 500 um, Variety of tip materials for maximum lifetime, Replaceable individual probes for easy maintenance -
间距: 74 µm 特点: Measurement accuracy : Excellent signal integrity, Minimum contact resistance, Repeatable results, High test efficiency : Straightforward cleaning and maintenance Minimum pad damage, Minimum contact force, Easily replaceable probes, Lower cost of test, Lo 频率: up to 10 GHz 工作温度: -40 to 140 Degree C 垫子材料: Al -
特点: High-bandwidth RF microstrip transmission lines to probe tips guarantee performance and ensure low signal loss. Patented ground and power planes, with bypass capacitors, provide resonance-free stable power supplies directly to the DUTs. Consistent low con -
特点: Guarded traces to probe tips with lowest leakage, Excellent measurement fidelity with low leakage (1 fA/V), fast settling time, and reduced cross talk One card for both Cu and Al pads probing, Small-pad probing down to 30×30 µm, Low cost of ownership, sup 工作温度: -50 to 125 Degree C 垫子材料: Al 垫子材料: Cu 垫子材料: Au -
间距: 36 to 72 um 特点: Ship high-yield KGD: Consistent low contact resistance and low-inductance probe tips ensure accurate and repeatable mmW RF measurements. Stable DUT operation: Power and ground planes at the DUT provide low-inductance power transmission paths. Patented byp 频率: up to 81 GHz 接触电阻: 0.005 to 0.010 O (Au pads), 0.1 to 0.2 O (Al pads) 直流电流: 0.2 to 1 A