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卡盘尺寸: 200 mm 查克-西塔粗旅行: ±7.5 Degree Chuck Theta 精细分辨率: ±0.000035 Degree 卡盘行程范围: 205 x 205 mm 查克旅行决议: 0.5 µm -
卡盘尺寸: 200 mm 查克-西塔粗旅行: ±11 Degree Chuck Theta 精细分辨率: ±0.01 mm 卡盘行程范围: 205 x 205 mm 查克旅行决议: 1.5 to 14 µm -
卡盘尺寸: 200 mm 查克-西塔粗旅行: ±360 Degree Chuck Theta 精细分辨率: ±1.5 x 10?5 Degrees 卡盘行程范围: 203 x 203 mm 查克旅行决议: 75 µm -
卡盘尺寸: 200 mm Chuck Planarity: ±10 um 查克-西塔粗旅行: ±7.5 Degree 卡盘行程范围: 203 x 203 mm 查克旅行决议: 0.2 µm -
卡盘尺寸: 200 mm Chuck Planarity: ±10 um 查克-西塔粗旅行: ±5.5 to 5.7 Degrees 卡盘行程范围: 203 x 203 mm 查克旅行决议: 1 µm -
卡盘尺寸: 200 mm 查克-西塔粗旅行: ±6 Degree 卡盘行程范围: 200 x 200 mm 查克旅行决议: 1 µm 频率: DC to 1 KHz -
卡盘尺寸: 200 mm 频率: 40 to 67 GHz 测量类型: RF 显微镜眼罩: 20x 显微镜放大范围: 150x -
卡盘尺寸: 200 mm Chuck Planarity: ±3 µm 卡盘行程范围: 200 mm 频率: Up to 110 GHz 测量类型: RF -
卡盘尺寸: 300 mm 查克-西塔粗旅行: ±3.75 Degrees 卡盘行程范围: 301 x 501 mm 查克旅行决议: 0.2 µm 频率: DC to 2.5 Hz -
卡盘尺寸: 300 mm 查克-西塔粗旅行: ±3.75 Degrees 卡盘行程范围: 301 x 501 mm 查克旅行决议: 0.2 µm 频率: DC to 2.5 Hz -
频率: 170 to 220 GHz 类型: Automatic 类型: Manual 应用: 5G, 6G 工作温度: -60 to 125 Degree C -
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间距: 50 um 应用: DDR3, DDR4, LPDDR3, LPDDR4, GDDR5, GDDR6, HBM, HBM2 with 2Hi, 4Hi, and 8Hi stack, KGD (known good die) and KGS (known good stack) test up to 3.2 Gbps Next-generation and emerging DRAM memory devices 特点: Higher parallelism, higher test efficiency, and lower cost of test by using Advanced TRE technology (ATRE), Excellent contact stability and electrical performance to optimize yield, Superior thermal operation to shorten soak time and improve scrub perform 频率: 125 MHz to 200 MHz 接触电阻: = 0.5 O(Power path resistance), = 0.1 O(Ground path resistance), = 10.0 O(Signal path resistance), = 2.0 O(Low resistance path signal path resistance) -
间距: 250 to 500 um 应用: WLCSP 特点: Broad range of spring pins options for targeted application, with pitch ranging 250 – 500 um, Variety of tip materials for maximum lifetime, Replaceable individual probes for easy maintenance -
间距: 74 µm 特点: Measurement accuracy : Excellent signal integrity, Minimum contact resistance, Repeatable results, High test efficiency : Straightforward cleaning and maintenance Minimum pad damage, Minimum contact force, Easily replaceable probes, Lower cost of test, Lo 频率: up to 10 GHz 工作温度: -40 to 140 Degree C 垫子材料: Al -
间距: 36 to 72 um 特点: Ship high-yield KGD: Consistent low contact resistance and low-inductance probe tips ensure accurate and repeatable mmW RF measurements. Stable DUT operation: Power and ground planes at the DUT provide low-inductance power transmission paths. Patented byp 频率: up to 81 GHz 接触电阻: 0.005 to 0.010 O (Au pads), 0.1 to 0.2 O (Al pads) 直流电流: 0.2 to 1 A -
间距: 80 to 106 um 特点: Measurement accuracy, Excellent signal integrity, Minimum contact resistance, Repeatable results, High test efficiency, Straightforward cleaning and maintenance Minimum pad damage, Minimum contact force, Easily replaceable probes, Lower cost of test, Long 频率: up to 45 GHz 直流电流: 0.8 to 10 A 隔离: 30 dB
